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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-01 21:33:19 | |
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1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
This NPN bipolar junction transistor (BJT) from Microchip Technology, part number JANTXV2N3700UB, is designed for general-purpose amplification and switching applications. It operates with a collector-emitter voltage of up to 80V and can handle a continuous collector current of 1A. The transistor has a power dissipation rating of 500mW and a DC current gain (hFE) of at least 50 at 500mA and 10V.
The JANTXV2N3700UB is housed in a compact 3-SMD, No Lead package, specifically a 3-UB (2.9x2.2) footprint, making it suitable for space-constrained designs. It is designed for surface mounting, requiring appropriate soldering techniques for reliable integration into printed circuit boards. The operating temperature range is from -65°C to 200°C (TJ), providing robustness in various environmental conditions.
Key electrical characteristics include a Vce saturation of 500mV maximum at 50mA base current and 500mA collector current. The component is specified with RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these compliance details are based on available database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTXV2N3700UB has an operating voltage of 80 V.
The JANTXV2N3700UB can handle a continuous current of 1 A.
The power dissipation for the JANTXV2N3700UB is 500 mW.
The minimum DC current gain (hFE) for the JANTXV2N3700UB is 50 at 500mA collector current and 10V collector-emitter voltage.
The JANTXV2N3700UB operates between -65°C and 200°C (TJ).
The JANTXV2N3700UB is an NPN transistor.
The JANTXV2N3700UB is supplied in a 3-SMD, No Lead package, specifically a 3-UB (2.9x2.2) size.