BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The JANTXV2N2920U from Microsemi Corporation is a high-reliability NPN small signal unitized dual silicon transistor. It is qualified per MIL-PRF-19500/355, indicating its suitability for demanding applications.
This transistor boasts a maximum collector-emitter voltage (VCEO) of 60 Vdc and a maximum collector current (IC) of 30 Adc. The operating and storage junction temperature range is from -55 C to +200 C. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 60 to 1000 depending on the test conditions, and a collector-emitter saturation voltage (VCE(sat)) of 0.3 Vdc maximum.
Packaged in a TO-78 case, this dual transistor array is designed for applications requiring robust performance and reliability. Its specifications make it suitable for various electronic circuits where small signal amplification and switching are needed under stringent conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the JANTXV2N2920U is 60 Vdc.
The JANTXV2N2920U transistor has a maximum collector current (IC) of 30 Adc.
The operating and storage junction temperature range for the JANTXV2N2920U is -55 C to +200 C.
The JANTXV2N2920U is available in a TO-78 package.
The forward current transfer ratio (hFE) of the JANTXV2N2920U at 1.0 mAdc and 5.0 Vdc VCE ranges from a minimum of 150 to a maximum of 1000.
The collector-emitter saturation voltage (VCE(sat)) for the JANTXV2N2920U is a maximum of 0.3 Vdc when tested at 1.0 mAdc collector current and 100 µAdc base current.
