| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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This PNP bipolar junction transistor (BJT) from Microchip Technology, part number JANTXV2N2907AUB, is designed for discrete semiconductor applications. It operates with a maximum collector current of 600 mA and a collector-emitter voltage of 60 V. The transistor has a power dissipation rating of 500 mW.
It is housed in a 4-SMD, No Lead package, suitable for surface mount applications. The operating temperature range is from -65°C to 200°C (TJ). Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation of 1.6V maximum at 50mA and 500mA.
The JANTXV2N2907AUB is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status. These compliance details are based on available database information and should be reviewed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTXV2N2907AUB transistor has a maximum collector-emitter voltage of 60V.
The JANTXV2N2907AUB transistor is supplied in a 4-SMD, No Lead package.
The operating temperature range for the JANTXV2N2907AUB transistor is -65°C to 200°C (TJ).