| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
309 pcs
|
309 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| SVHC Present |
The JANTXV2N2907A is a PNP bipolar junction transistor (BJT) manufactured by Motorola Semiconductor. This component is designed for through-hole mounting and operates within a wide temperature range from -65°C to +200°C.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 60V and a maximum DC Collector Current (IC) of 600mA. The power dissipation (Pd) is rated at 0.5W. The transistor exhibits a typical Collector-Emitter Saturation Voltage (VCE(sat)) of 0.4V. DC current gain (hFE) is specified with a maximum of 450 at 1mA, 10V, and a minimum of 50 at 500mA, 10V.
This device is suitable for various general-purpose amplification and switching applications where its specific voltage and current ratings are beneficial. The TO-206AA-3 package is standard for through-hole components, facilitating easy integration into circuit boards.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level (MSL) 1, and REACH unaffected status. These specifications make the JANTXV2N2907A a reliable choice for electronic designs requiring a robust PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
600mA.
TO-206AA-3, through-hole mounting.
-65°C to +200°C.
Maximum 450 at 1mA, 10V; minimum 50 at 500mA, 10V.
0.5W.
0.4V.