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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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This JANTXV2N2907A is a PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for through-hole mounting and comes in a TO-18 metal can package.
Key electrical characteristics include a maximum collector current of 600 mA and a breakdown voltage of 60 V. The transistor offers a DC current gain (hFE) of at least 100 at 150 mA and 10 V, with a Vce saturation of 1.6 V at 50 mA and 500 mA. It can operate within a temperature range of -65°C to 200°C (TJ).
The component is specified with RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. Its through-hole mounting makes it suitable for various electronic circuit designs where discrete transistor components are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (Vceo) is 60 V.
The continuous collector current is 600 mA.
The operating temperature range is -65°C to 200°C (TJ).
It is supplied in a TO-206AA, TO-18-3 Metal Can package, also referred to as TO-18.
The JANTXV2N2907A transistor is designed for through-hole mounting.
