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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Collector Emitter Breakdown |
The JANTXV2N2906A from Microchip Technology is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-18 Metal Can package and designed for through-hole mounting.
Key electrical specifications include a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 600mA. The transistor offers a minimum DC current gain (hFE) of 40 at 150mA and 10V, with a Vce saturation of 1.6V maximum at 50mA and 500mA. The maximum power dissipation is 500mW.
This component operates within a temperature range of -65°C to 200°C (TJ). Its TO-206AA, TO-18-3 Metal Can package and through-hole mounting type make it suitable for traditional PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The JANTXV2N2906A is supplied in a TO-206AA, TO-18-3 Metal Can package.
The operating temperature range is -65°C to 200°C (TJ).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.