| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTXV2N2222A is a military-grade NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for general-purpose applications requiring robust performance.
Key electrical specifications include a maximum collector current (Ic) of 800mA and a collector-emitter breakdown voltage (Vce) of 50V. The device offers a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a maximum Vce saturation of 1V at 50mA and 500mA. The maximum power dissipation is rated at 500mW.
This transistor operates within a wide temperature range of -65°C to 200°C (TJ). It is housed in a TO-18 (TO-206AA) metal can package and is designed for through-hole mounting.
The JANTXV2N2222A is qualified to MIL-PRF-19500/255 and is marked as RoHS non-compliant. Its REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the JANTXV2N2222A is 800 mA.
The collector-emitter breakdown voltage (Vce) for the JANTXV2N2222A is 50 V.
The maximum power dissipation for the JANTXV2N2222A is 500 mW.
The JANTXV2N2222A operates within a temperature range of -65°C to 200°C (TJ).
The JANTXV2N2222A is an NPN transistor.
The JANTXV2N2222A is designed for through-hole mounting.
The JANTXV2N2222A is supplied in a TO-18 (TO-206AA) metal can package.