JANTXV1N6642US

The JANTXV1N6642US is a JANTXV-level military-qualified fast recovery switching diode from Microchip Technology, part of the 1N6642US family. It is designed for high-reliability applications requiring ultra-fast switching speeds. The diode features a minimum breakdown voltage of 100V and a maximum working peak reverse voltage of 75V. It can handle an average rectified current of 300 mA at +75°C (derated at 4.6 mA/°C above +110°C) and a peak forward surge current of 2.5 A (8.3 ms half-sine wave). The reverse recovery time is 20 ns, making it suitable for high-frequency switching.

This device is housed in a voidless hermetically sealed glass SQ-MELF package (D-5B supplier device package) with surface mount termination. The package offers excellent thermal performance with a junction-to-ambient thermal resistance of 250°C/W (typical, on FR4) and junction-to-end cap of 40°C/W. The operating temperature range is -65°C to +175°C. The diode is metallurgically bonded and non-cavity, ensuring long-term reliability in harsh environments.

Per the datasheet, this diode can replace several industry-standard devices including 1N4148UR, 1N4148UR-1, 1N4150UR-1, and 1N914UR. It is qualified to MIL-PRF-19500/578 and is available in JAN, JANTX, JANTXV, and JANS levels. Note that this military-grade part is RoHS non-compliant; RoHS compliant versions are available in commercial grade. Typical applications include high-frequency data lines, RS-232/RS-422 interfaces, Ethernet 10 Base T, switching core drivers, and general computing logic.