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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Maximum Repetitive Peak Reverse Voltage | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The JANTXV1N5804 is a fast recovery rectifier diode manufactured by Microchip Technology. It is rated for a maximum repetitive peak reverse voltage of 100V and an average rectified current of 1A. The device features a fast reverse recovery time of 25 ns, making it suitable for high-frequency rectification and switching applications.
Forward voltage is specified at 875 mV maximum at 1A forward current, and junction capacitance is 25 pF at 10V, 1MHz. The diode operates over a wide temperature range from -65°C to 175°C.
The component is offered in a through-hole, axial-leaded package (supplier device package A, Axial) for robust mounting on printed circuit boards. It uses standard silicon junction technology.
| Qty | Low | High |
|---|---|---|
| 162+ | $10.03 | $10.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum repetitive peak reverse voltage.
1A maximum average rectified current.
875 mV maximum at 1 A forward current.
25 ns maximum reverse recovery time.
A, Axial through-hole package, mounting type Through Hole.
-65°C to 175°C.
25 pF at 10V reverse voltage, 1MHz.