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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,836 pcs
|
2836 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Forward Surge Current (IFSM) | |
| Junction and Storage Temperature Range | |
| Junction/Storage Temperature Range | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Polarity | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Termination Finish | |
| Thermal Resistance, Junction to Lead | |
| Voltage | |
| Voltage - Forward (Vf) (Max) @ If | |
| Weight |
The JANTXV1N5620 is a standard recovery rectifier diode from the 1N5614-1N5622 series, manufactured by Microchip Technology. It is designed for high-reliability applications and is military qualified to MIL-PRF-19500/427. The diode features a maximum reverse voltage of 800V and an average rectified current of 1A, with a forward voltage drop of 1.3V at 3A. The reverse recovery time is 2 µs, typical for standard recovery rectifiers.
This rectifier uses voidless hermetically sealed glass construction with an internal Category I metallurgical bond, providing robustness and reliability. It can handle forward surge currents up to 30A (8.3ms half-sine) and operates over a junction temperature range of -65°C to 200°C. The thermal resistance from junction to lead is 38°C/W.
The device is supplied in a through-hole axial package (A, Axial) with tin/lead (Sn/Pb) termination finish. It is suitable for general rectifier applications including bridges, half-bridges, and catch diodes in military, aerospace, and other high-reliability systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.50 | $7.50 |
| 100+ | $6.97 | $6.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
1A.
1.3V.
2 µs.
Through-hole axial package (A, Axial).
-65°C to 200°C.
30A at 8.3ms half-sine.