| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Style | |
| Power Dissipation (Max) |
The JANTX2N930 is an NPN bipolar junction transistor manufactured by RAYTHEON. This component is suitable for general-purpose applications requiring high voltage handling capabilities. It offers a maximum collector-emitter voltage of 45V and a continuous collector current of 0.03A.
The transistor operates within a temperature range of -55°C to 200°C, with a maximum power dissipation of 300mW. It features a minimum hFE of 100 at 10µA and 5V.
The JANTX2N930 comes in a TO-18-3 package and is designed for through-hole mounting. Its physical material is silicon. Environmental compliance data indicates it is RoHS Non-Compliant and Contains Lead, with an MSL of 1 Unlimited and REACH Unaffected status. These compliance details require verification.
This transistor is a reliable choice for circuits needing a general-purpose NPN BJT with specific voltage and current ratings, housed in a standard through-hole package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the JANTX2N930 is 45V.
The continuous collector current rating for the JANTX2N930 is 0.03A.
The minimum hFE for the JANTX2N930 at 10µA and 5V is 100.
The maximum power dissipation for the JANTX2N930 is 300mW.
The JANTX2N930 operates within a temperature range of -55°C to 200°C.
The JANTX2N930 is an NPN bipolar junction transistor.
The JANTX2N930 is supplied in a TO-18-3 package.