| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies JANTX2N7218 is a high-reliability N-Channel Power MOSFET built with HEXFET technology. This device features a drain-to-source breakdown voltage of 100V and a continuous drain current of 28A at 25°C case temperature.
Designed for demanding applications, the JANTX2N7218 offers a low on-state resistance of 0.077Ω typical. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 125W at 25°C.
The MOSFET is housed in a hermetically sealed TO-254AA package, suitable for through-hole mounting. Its features include simple drive requirements, a dynamic dv/dt rating, and light weight, making it well-suited for applications requiring high reliability.
Key electrical characteristics include a gate-to-source voltage range of ±20V, a pulsed drain current of 112A, and a single pulse avalanche energy of 250mJ. The integrated source-drain diode has a forward voltage of 1.5V maximum and a reverse recovery time of 400ns maximum.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 100V.
The continuous drain current is 28A at 25°C case temperature and 20A at 100°C case temperature.
The typical on-state resistance is 0.077Ω.
The operating junction and storage temperature range is -55°C to +150°C.
The JANTX2N7218 is available in a TO-254AA package for through-hole mounting.