| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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340 pcs
|
340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
32 pcs
|
32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JANTX2N6990 from Microchip Technology is a quad NPN bipolar junction transistor (BJT) array. This component is designed for applications requiring multiple NPN transistors in a single package. It features a collector-emitter breakdown voltage of 50V and can handle a maximum collector current of 800mA.
The transistor array has a Vce saturation voltage of 1V at 50mA collector current and 500mA base current, with a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V Vce. The maximum power dissipation is 1.5W. The operating temperature range is from -65°C to 200°C.
Packaged in a TO-116 through-hole configuration, the JANTX2N6990 is suitable for various through-hole mounting applications. Its robust operating temperature range makes it a reliable choice for demanding environments. The component is specified with a collector cutoff current of 10µA (ICBO).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The maximum collector current is 800mA.
The operating temperature range is -65°C to 200°C.
The JANTX2N6990 is supplied in a TO-116 package.
The minimum DC current gain (hFE) is 100 at 150mA collector current and 10V Vce.