0402N680F500CG
Walsin Technology
The Walsin Technology 0402N680F500CG is a ceramic capacitor. It features RoHS3 compliance and MSL Level 1.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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47,000 pcs
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47000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel |
The Infineon Technologies JANTX2N6849 is a P-channel HEXFET Power MOSFET designed for high-reliability applications. It offers a drain-source breakdown voltage (BVDSS) of -100V and a continuous drain current (ID) of -6.5A. The MOSFET has a maximum on-state resistance (RDS(on)) of 0.30 Ohms and a maximum gate charge (QG) of 34.8nC.
This device is qualified to JANS screening flow according to MIL-PRF-19500 for space applications. It is hermetically sealed and features repetitive avalanche and dynamic dv/dt ratings, along with a simple drive requirement. The ESD rating is Class 1C per MIL-STD-750, Method 1020.
The JANTX2N6849 is housed in a TO-205AF / TO-39 through-hole package, making it suitable for various power management applications including DC-DC converters and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -100V.
The maximum continuous drain current is -6.5A.
The maximum on-resistance is 0.30 Ohms.
The package type is TO-205AF / TO-39.
The ESD rating is Class 1C per MIL-STD-750, Method 1020.
