LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | 2003 | On Request | On Request |
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The JANTX2N6798 is an N-Channel Power MOSFET manufactured by International Resistive Company. It is designed for high-reliability applications and features a breakdown voltage of 200V and a low on-resistance of 0.40 Ohms at a continuous drain current of 5.5A.
This HEXFET technology transistor offers advantages such as voltage control, fast switching, and temperature stability. It is suitable for various applications including switching power supplies, motor controls, inverters, and high energy pulse circuits.
The device is hermetically sealed and comes in a TO-39 (TO-205AF) through-hole package. Key electrical characteristics include a gate threshold voltage between 2.0V and 4.0V, and a maximum power dissipation of 25W at 25°C case temperature. Thermal resistance from junction to case is 5.0°C/W.
Additional features include repetitive avalanche ratings and dynamic dv/dt rating, making it robust for demanding applications. The operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (BVDSS) of the JANTX2N6798 is 200V.
The static drain-to-source on-resistance (RDS(on)) is a maximum of 0.40 Ohms at VGS = 10V and ID = 5.5A.
The continuous drain current (ID) is 5.5A at 25°C case temperature and 3.5A at 100°C case temperature.
The operating junction and storage temperature range is -55°C to +150°C.
The JANTX2N6798 is supplied in a TO-39 (TO-205AF) through-hole package.
