2N2907AJAN
Motorola Semicondutor
The 2N2907AJAN is a bipolar junction transistor from Motorola Semiconductor. It features RoHS3 compliance and an MSL rating of 1.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| SVHC Present |
The JANTX2N6798 from OMNIREL is a high-reliability N-Channel Power MOSFET designed for demanding applications. It utilizes HEXFET technology to achieve low on-state resistance and high transconductance.
Key electrical specifications include a drain-to-source breakdown voltage of 200V and a static drain-to-source on-resistance of 0.40 Ohms at a gate-to-source voltage of 10V and a continuous drain current of 5.5A. The device can handle a continuous drain current of 3.5A at 100°C case temperature and a pulsed drain current of up to 22A. The maximum power dissipation is rated at 25W at 25°C case temperature.
This MOSFET is suitable for applications such as switching power supplies, motor controls, inverters, and high energy pulse circuits. It operates within a junction and storage temperature range of -55°C to +150°C. The device is housed in a hermetically sealed TO-39 package and is designed for through-hole mounting.
Features such as repetitive avalanche ratings and dynamic dv/dt rating are also highlighted, indicating its suitability for robust power management tasks. The simple drive requirements and ESD rating of Class 1C per MIL-STD-750 further underscore its reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 200V minimum, and the gate-to-source voltage range is ±20V.
The JANTX2N6798 is available in a TO-205AF (TO-39) through-hole package.
The operating junction temperature range is -55 to +150°C.
The maximum continuous drain current is 5.5A at 25°C case temperature and 3.5A at 100°C.
The maximum static drain-to-source on-resistance is 0.4Ω at VGS=10V and ID=5.5A.
The single pulse avalanche energy is 207.5mJ.
The gate threshold voltage ranges from 2.0V to 4.0V at VDS=VGS and ID=250µA.
