JTX2N2907A
Motorola Semicondutor
The JTX2N2907A is a single bipolar junction transistor manufactured by Motorola Semiconductor. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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103 pcs
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103 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The JANTX2N6790 from Vishay Dale is an N-channel MOSFET designed for high-reliability applications. It features a maximum drain-source voltage (Vdss) of 200V and can handle a continuous drain current (Id) of up to 3.5A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds) of 850mOhm at 3.5A and 10V, a maximum gate threshold voltage (Vgs(th)) of 4V at 250µA, and a gate charge (Qg) of 14.3 nC at 10V. The device has a maximum gate-source voltage (Vgs) of ±20V and requires a drive voltage of 10V.
This MOSFET is packaged in a TO-39 (TO-205AF) metal can with a through-hole mounting type. It operates within a temperature range of -55°C to +150°C (TJ) and has a maximum power dissipation of 800mW (Tc). The JANTX2N6790 is designed to meet military-grade standards, making it suitable for harsh environments and legacy systems requiring high reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
3.5A at 25°C case temperature.
850 milliohms maximum at 3.5A drain current and 10V gate-source voltage.
4V maximum at 250µA drain current.
800mW at case temperature.
-55°C to 150°C junction temperature.
TO-39 (TO-205AF Metal Can) through-hole package.
