| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | 9837 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type |
The JANTX2N6788 is a high-reliability, N-Channel Power MOSFET manufactured by Harris Semiconductor, utilizing HEXFET technology. This transistor is designed for demanding applications requiring low on-state resistance and high transconductance.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of 100V and a Static Drain-to-Source On-Resistance (RDS(on)) of 0.30 Ohms at a gate-source voltage of 10V and a continuous drain current of 6.0A. It can handle a continuous drain current of 3.5A at 100°C case temperature and a pulsed drain current of up to 24A. The device operates within a junction and storage temperature range of -55°C to +150°C.
This MOSFET is suitable for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. It is hermetically sealed and rated for Class 1B ESD protection per MIL-STD-750.
The JANTX2N6788 is supplied in a TO-205AF (TO-39) package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage (BVDSS) is 100V.
The Static Drain-to-Source On-Resistance (RDS(on)) is 0.30 Ohms at VGS = 10V and ID = 6.0A.
The continuous drain current is 6.0A at 25°C case temperature and 3.5A at 100°C case temperature.
The operating junction and storage temperature range is -55°C to +150°C.
The JANTX2N6788 is supplied in a TO-205AF (TO-39) package.
The Moisture Sensitivity Level is 1.