| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The JANTX2N6788 is a high-reliability, single N-Channel MOSFET manufactured by Microsemi Corporation. This component is designed for applications requiring robust performance, featuring a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 6A at 25°C case temperature.
Key electrical characteristics include a maximum gate-to-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The on-resistance (Rds On) is specified as a maximum of 350mOhm at 6A and 10V gate drive voltage. The maximum power dissipation is 800mW (Tc).
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-39 package and utilizes through-hole mounting. The technology employed is MOSFET (Metal Oxide).
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These attributes make the JANTX2N6788 suitable for various demanding electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the JANTX2N6788 is 100V.
The JANTX2N6788 has a continuous drain current of 6A.
The operating temperature range for the JANTX2N6788 is -55°C to 150°C (TJ).
The JANTX2N6788 MOSFET is supplied in a TO-39 package.
The JANTX2N6788 MOSFET is mounted using the Through Hole method.