| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,700 pcs
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2700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon JANTX2N6766 is a high-reliability N-Channel Power MOSFET built with HEXFET® technology. This design provides very low on-state resistance combined with high transconductance, superior reverse energy, and diode recovery dv/dt capability.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of 200V and a Continuous Drain Current (ID) of 30A at 25°C with a 10V gate-source voltage. The static drain-to-source on-resistance (RDS(on)) is a low 0.085Ω under typical test conditions. The device also features Repetitive Avalanche Ratings and a Dynamic dv/dt Rating.
This MOSFET is housed in a TO-3 (TO-204AE) through-hole package. It is well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage (BVDSS) is 200V.
The continuous drain current is 30A at 25°C with a 10V gate-source voltage.
The static drain-to-source on-resistance (RDS(on)) is 0.085Ω.
The JANTX2N6766 is available in a TO-3 (TO-204AE) package and is a through-hole device.
The operating junction and storage temperature range is -55°C to +150°C.