JANTX2N6766 The JANTX2N6766 is an N-Channel MOSFET from Microsemi Corporation. It offers a 200V drain-to-source voltage and 30A continuous drain current.
Mfr Part #:

JANTX2N6766

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The JANTX2N6766 is an N-Channel MOSFET from Microsemi Corporation. It offers a 200V drain-to-source voltage and 30A continuous drain current.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.99

JANTX2N6766 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request

JANTX2N6766 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

JANTX2N6766 Description

Short technical summary and product information.

The JANTX2N6766 is a high-reliability N-Channel power MOSFET manufactured by Microsemi Corporation. It utilizes HEXFET® MOSFET technology, known for its efficient geometry and advanced processing to achieve low on-state resistance and superior performance characteristics.

 

Key electrical specifications include a 200V drain-to-source breakdown voltage (BVDSS) and a continuous drain current of 30A at 25°C case temperature. The static drain-to-source on-resistance (Rds On) is a maximum of 90mOhm at 30A and 10V gate-to-source voltage. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the gate-to-source voltage range is ±20V.

 

This MOSFET is designed for applications requiring high power handling and fast switching. It features repetitive avalanche ratings and a dynamic dv/dt rating, making it suitable for demanding environments. The operating junction and storage temperature range is -55°C to 150°C.

 

The JANTX2N6766 is housed in a TO-3 (TO-204AE) package, designed for through-hole mounting. Its robust construction and high-reliability features make it a suitable choice for various power electronics applications.

JANTX2N6766 Quick Information

Product Type: MOSFET
Canonical Name: JANTX2N6766 N-Channel Power MOSFET
Subcategory: N-Channel

JANTX2N6766 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTX2N6766 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTX2N6766 Features

  • 200V drain-to-source breakdown voltage.
  • 30A continuous drain current.
  • 90mOhm maximum Rds On.
  • TO-3 package for through-hole mounting.
  • High-reliability HEXFET technology.

JANTX2N6766 Applications

  • Suitable for switching power supplies.
  • Used in motor control circuits.
  • Applicable for inverters and choppers.
  • Designed for audio amplifiers.
  • Ideal for high energy pulse circuits.

JANTX2N6766 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the JANTX2N6766?

The drain-to-source voltage (BVDSS) is 200V.

What is the continuous drain current for the JANTX2N6766?

The continuous drain current is 30A at 25°C case temperature.

What is the Rds On for the JANTX2N6766?

The maximum Rds On is 90mOhm at 30A drain current and 10V gate-to-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the JANTX2N6766 in?

The JANTX2N6766 is in a TO-3 (TO-204AE) package.

How is the JANTX2N6766 mounted?

It is designed for through-hole mounting.

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