| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | 00+32 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The JANTX2N6764 is a high-reliability N-Channel power MOSFET manufactured by Microsemi Corporation. This component is designed for demanding applications, featuring a drain-source voltage (Vdss) of 100V and a continuous drain current (Tc) of 38A. Its on-resistance (Rds On) is specified as a maximum of 65mOhm at 38A and 10V gate-source voltage.
The MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-3 package and utilizes Through Hole mounting. The gate charge (Qg) is 125 nC at 10V, with a maximum gate-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 4V at 250µA.
This device is built using MOSFET (Metal Oxide) technology. It has a power dissipation rating of 150W when measured at the case (Tc). The JANTX2N6764 is listed as RoHS3 Compliant, has an MSL of 1 Unlimited, and is REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the JANTX2N6764 is 100 V.
The JANTX2N6764 has a continuous drain current of 38A when measured at the case (Tc).
The operating temperature range for the JANTX2N6764 is -55°C to 150°C (TJ).
The JANTX2N6764 is supplied in a TO-3 package.
The JANTX2N6764 is mounted using the Through Hole method.