SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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49 pcs
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49 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N6762 is an N-Channel Power MOSFET manufactured by INTERNATIONAL, utilizing HEXFET technology for high performance. This transistor boasts a drain-to-source breakdown voltage of 500V and a low static drain-to-source on-state resistance, with a maximum of 1.5Ω at 3.0A and 1.8Ω at 4.5A.
Key electrical characteristics include a gate threshold voltage ranging from 2V to 4V and a forward transconductance of at least 2.7S. The continuous drain current is rated at 4.5A at 25°C case temperature and 3.0A at 100°C. The pulsed drain current can reach up to 18A.
With a maximum power dissipation of 75W at 25°C, this MOSFET is suitable for applications requiring efficient power handling. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-204AA/AE package for through-hole mounting.
The JANTX2N6762 is well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits due to its voltage control, fast switching, ease of paralleling, and temperature stability.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 4.5A at 25°C case temperature and 3.0A at 100°C case temperature.
The drain-to-source breakdown voltage (BVDSS) is 500V.
The static drain-to-source on-state resistance is a maximum of 1.5Ω at VGS = 10V and ID = 3.0A.
The operating junction temperature range is -55°C to 150°C.
The JANTX2N6762 is supplied in a TO-204AA/AE package for through-hole mounting.
