JANTX2N6762 The Microsemi Corporation JANTX2N6762 is an N-Channel MOSFET designed for high-reliability applications. It offers a 500V breakdown voltage and a 4.5A continuous drain current.
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JANTX2N6762

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The Microsemi Corporation JANTX2N6762 is an N-Channel MOSFET designed for high-reliability applications. It offers a 500V breakdown voltage and a 4.5A continuous drain current.
✓ Total Stock: 170 pcs
$ Price Range: $0.99

JANTX2N6762 Available from 1 distributor

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JANTX2N6762 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

JANTX2N6762 Description

Short technical summary and product information.

The JANTX2N6762 from Microsemi Corporation is a high-reliability N-Channel power MOSFET utilizing HEXFET technology. It is designed for demanding applications requiring robust performance and stability.

 

Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of 500V and a maximum Static Drain-to-Source On-State Resistance (RDS(on)) of 1.8 Ohm at 4.5A and 10V VGS. The continuous drain current is rated at 4.5A at 25°C case temperature, derating to 3.0A at 100°C. The device can handle pulsed drain currents up to 18A and has a maximum power dissipation of 75W at 25°C case temperature.

 

This MOSFET features a Gate Threshold Voltage (VGS(th)) between 2.0V and 4.0V and can withstand Gate-to-Source voltages up to ±20V. It also offers a Single Pulse Avalanche Energy (EAS) of 1.1 mJ and an Avalanche Current (IAR) of 4.5A, indicating good ruggedness.

 

The JANTX2N6762 is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 150°C (TJ). The HEXFET technology provides advantages such as voltage control, fast switching, and temperature stability, making it suitable for switching power supplies, motor controls, and inverters.

JANTX2N6762 Quick Information

Product Type: MOSFET
Canonical Name: JANTX2N6762 N-Channel 500V 4.5A TO-204AA Power MOSFET
Subcategory: N-Channel

JANTX2N6762 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTX2N6762 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTX2N6762 Features

  • 500V Drain-to-Source Breakdown Voltage.
  • 4.5A Continuous Drain Current.
  • 1.8 Ohm Max On-State Resistance.
  • TO-204AA (TO-3) Package.
  • Wide Operating Temperature Range.

JANTX2N6762 Applications

  • Suitable for switching power supplies.
  • Ideal for motor control circuits.
  • Used in inverter applications.
  • Applicable to choppers and audio amplifiers.
  • Designed for high energy pulse circuits.

JANTX2N6762 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the JANTX2N6762?

The JANTX2N6762 has a continuous drain current of 4.5A at 25°C case temperature.

What is the breakdown voltage of the JANTX2N6762 MOSFET?

The Drain-to-Source Breakdown Voltage (BVDSS) for the JANTX2N6762 is 500V.

What is the maximum on-state resistance (Rds(on)) for the JANTX2N6762?

The maximum Static Drain-to-Source On-State Resistance is 1.8 Ohm at 4.5A and 10V VGS.

What is the operating temperature range for the JANTX2N6762?

The operating junction temperature range is -55°C to 150°C.

What package type is the JANTX2N6762 MOSFET supplied in?

The JANTX2N6762 is supplied in a TO-204AA (TO-3) package.

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