JTX2N2907A
Motorola Semicondutor
The JTX2N2907A is a single bipolar junction transistor manufactured by Motorola Semiconductor. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | 9422 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The JANTX2N6756 from ACI is an N-Channel MOSFET designed for efficient performance. It offers a breakdown voltage of 100V and a drain-source resistance of 210mΩ. This device is housed in a TO-3 package, suitable for through-hole mounting.
The HEXFET transistor technology utilized in the JANTX2N6756 provides advantages such as voltage control, fast switching speeds, and stable electrical parameters over temperature variations. Its design emphasizes low on-state resistance and high transconductance, along with superior reverse energy and diode recovery capabilities.
With a maximum power dissipation of 75W and an operating temperature range from -55°C to 150°C, the JANTX2N6756 is engineered for demanding applications. Its efficient geometry and unique processing contribute to its 'State of the Art' design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 100V.
The drain-source resistance is 210mΩ.
The maximum power dissipation is 75W.
The operating temperature range is -55°C to 150°C.
The JANTX2N6756 is available in a TO-3 package.
The JANTX2N6756 is mounted using the through-hole method.
