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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N6350 is a high-gain NPN Darlington bipolar junction transistor manufactured by Microchip Technology. It is designed for applications requiring significant current amplification, featuring a DC current gain of 2000 at 5A and 5V.
This transistor has a maximum collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 5A. Its saturation voltage (Vce Sat) is a maximum of 1.5V at 5mA base current and 5A collector current. The device is rated for a power dissipation of 1W.
Operating within a wide temperature range of -65°C to 200°C, the JANTX2N6350 is suitable for demanding environments. It is packaged in a TO-33 metal can and designed for through-hole mounting.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTX2N6350 has a maximum collector-emitter breakdown voltage of 80V.
The JANTX2N6350 can handle a continuous collector current of up to 5A.
The DC current gain (hFE) is a minimum of 2000 at 5A collector current and 5V collector-emitter voltage.
The JANTX2N6350 operates from -65°C to 200°C.
The JANTX2N6350 is supplied in a TO-205AC, TO-33-4 Metal Can package.
The JANTX2N6350 is designed for through-hole mounting.