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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N6300 from Microchip Technology is a single NPN Darlington bipolar junction transistor (BJT). It is designed for applications requiring high current gain and switching capabilities.
Key electrical specifications include a collector-emitter breakdown voltage of 60V and a maximum collector cutoff current of 500µA. The DC current gain (hFE) is a minimum of 750 at 4A and 3V, with a Vce saturation of 3V maximum at 80mA and 8A. The transistor has a power dissipation rating of 75W.
This component operates within a temperature range of -55°C to 200°C (TJ). It is housed in a TO-66 (TO-213AA) package and features a through-hole mounting type, making it suitable for through-hole PCB assemblies.
The JANTX2N6300 is qualified under MIL-PRF-19500/539, indicating its suitability for military applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55°C to 200°C (TJ).
The JANTX2N6300 is available in a TO-66 (TO-213AA) package.
The collector-emitter breakdown voltage is 60V.
The minimum DC current gain (hFE) is 750 at 4A and 3V.
The power rating is 75W.