| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Power Dissipation (Max) | |
| SVHC Present | |
| Transistor Type |
The JANTX2N6212 is a single PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for applications requiring high voltage and current handling capabilities, featuring a maximum collector-emitter breakdown voltage of 300V and a maximum collector current of 2A.
This transistor operates within a temperature range of -55°C to 200°C. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 1A and 5V, and a saturation voltage (VCE) of 1.6V at 125mA and 1A. The maximum collector cutoff current is 5mA.
The JANTX2N6212 is supplied in a TO-66 (TO-213AA) package, suitable for through-hole mounting. Its series designation is Military, MIL-PRF-19500/461, indicating its suitability for demanding military and aerospace applications where reliability and performance are critical.
This component is part of the JANTX series, which typically signifies military-grade specifications. Its robust construction and specified parameters make it a reliable choice for power switching and amplification circuits in harsh environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the JANTX2N6212 is 300V.
The JANTX2N6212 transistor has a maximum collector current of 2A.
The JANTX2N6212 operates within a temperature range of -55°C to 200°C.
The JANTX2N6212 is supplied in a TO-66 (TO-213AA) package.
The JANTX2N6212 is RoHS non-compliant.