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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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513 pcs
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513 pcs | On Request | 1 | On Request | On Request | 0243 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JANTX2N6212 from Microchip Technology is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for through-hole mounting and comes in a TO-66 (TO-213AA) package.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 300V and a maximum collector current of 2A. The transistor exhibits a minimum DC current gain (hFE) of 30 at 1A and 5V, with a Vce saturation of 1.6V maximum at 125mA and 1A. It has a maximum power dissipation of 3W.
Operating temperature ranges from -55°C to 200°C (TJ), making it suitable for demanding environments. The component is qualified under MIL-PRF-19500/461, indicating military-grade performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 300 V.
The maximum collector current is 2 A.
The operating temperature range is -55°C to 200°C.
The package type is TO-213AA, TO-66-2.
The JANTX2N6212 is mounted using the through-hole method.