| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,777 pcs
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8777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N6059 from Microchip Technology is a high-power NPN Darlington bipolar junction transistor (BJT). It is designed for applications requiring significant current handling and voltage blocking capabilities.
Key electrical specifications include a 100V collector-emitter voltage rating and a 12A continuous collector current. The transistor exhibits a high DC current gain (hFE) of 1000 at 6A and 3V, indicating its amplification capabilities. Its Vce saturation voltage is a maximum of 3V at 120mA and 12A, which is important for efficient switching applications.
This component is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting. The operating temperature range is from -55°C to 175°C, allowing for use in demanding environments. Its power dissipation is rated at 150W.
The JANTX2N6059 is suitable for various power switching and amplification circuits where robust performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55°C to 175°C.
The continuous current rating is 12A.
The collector-emitter voltage is 100V.
The package type is TO-204AA (TO-3).
The JANTX2N6059 transistor is mounted using the Through Hole method.