| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The JANTX2N5793 from Microchip Technology is a dual NPN bipolar transistor array designed for various electronic applications. This component features a collector-emitter breakdown voltage of 40V and can handle a maximum collector current of 600mA. Its operating temperature range is -65°C to 200°C (TJ), making it suitable for demanding environments.
The transistor array is housed in a TO-78-6 metal can package and is designed for through-hole mounting. Key electrical specifications include a maximum power dissipation of 600mW and a Vce saturation of 900mV at 30mA/300mA. The minimum DC current gain (hFE) is 40 at 150mA/10V. The current cutoff (ICBO) is a maximum of 10µA.
This component is qualified under MIL-PRF-19500/495, indicating its suitability for military applications. The RoHS status is listed as RoHS3 Compliant, and the REACH status is REACH Unaffected. The Moisture Sensitivity Level (MSL) is 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-65°C to 200°C
600mA
40V
TO-78-6 metal can
RoHS3 Compliant