JANTX2N5685 The Microchip Technology JANTX2N5685 is a high-power NPN bipolar junction transistor. It features a 60V collector-emitter breakdown voltage and a 50A continuous collector current rating.
Mfr Part #:

JANTX2N5685

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JANTX2N5685 is a high-power NPN bipolar junction transistor. It features a 60V collector-emitter breakdown voltage and a 50A continuous collector current rating.
✓ Total Stock: 40 pcs
$ Price Range: $0.99

JANTX2N5685 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
40 pcs
40 pcs On Request 1 On Request On Request On Request On Request On Request

JANTX2N5685 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

JANTX2N5685 Description

Short technical summary and product information.

The JANTX2N5685 from Microchip Technology is a robust NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component is housed in a TO-3 (TO-204AA) package.

 

Key electrical specifications include a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 50A. It offers a maximum power dissipation of 300W and a minimum DC current gain (hFE) of 15 at 25A and 2V. The device is qualified to MIL-PRF-19500/464, making it suitable for military and aerospace applications.

 

Additional specifications include a collector cutoff current of 500µA and a Vce saturation voltage of 5V at 10A collector current and 50A collector current. The JANTX2N5685 is rated for operation across a wide temperature range of -55°C to 200°C.

JANTX2N5685 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: JANTX2N5685 NPN Bipolar Junction Transistor
Subcategory: Single

JANTX2N5685 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTX2N5685 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTX2N5685 Features

  • High-power NPN bipolar junction transistor.
  • 60V collector-emitter breakdown voltage.
  • 50A continuous collector current rating.
  • 300W maximum power dissipation.
  • Qualified to MIL-PRF-19500/464.

JANTX2N5685 Applications

  • Used in high-power switching circuits
  • Suitable for power amplification applications
  • Ideal for motor control modules
  • Applicable in power supply regulation

JANTX2N5685 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the JANTX2N5685?

The collector-emitter breakdown voltage is 60V.

What is the maximum continuous collector current for the JANTX2N5685?

The maximum continuous collector current is 50A.

What is the power dissipation rating of the JANTX2N5685 transistor?

The maximum power dissipation is 300W.

What is the minimum DC current gain (hFE) for the JANTX2N5685 at 25A and 2V?

The minimum DC current gain (hFE) is 15 at 25A and 2V.

What is the operating temperature range for the JANTX2N5685?

The operating temperature range is -55°C to 200°C.

What package type is the JANTX2N5685 supplied in?

The JANTX2N5685 is supplied in a TO-3 (TO-204AA) package.

Home
Account

Categories