| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Microchip Technology JANTX2N5660 is a single bipolar NPN transistor. It is designed for applications requiring a breakdown voltage of up to 200V and can handle a continuous collector current of 2A.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 500mA and 5V, and a Vce saturation of 800mV maximum at 2A collector current and 400mA base current. The transistor has a maximum power dissipation of 2W.
This component operates within a temperature range of -65°C to 200°C. It is supplied in a TO-66 (TO-213AA) package and features a surface mount type.
The JANTX2N5660 is RoHS3 compliant, has an MSL rating of 1 Unlimited, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 200 V.
The maximum continuous collector current is 2 A.
The minimum DC current gain (hFE) is 40 at Ic=500mA, Vce=5V.
The operating temperature range is -65°C to 200°C.
It is supplied in a TO-213AA, TO-66-2 package.
The mounting type is Surface Mount.