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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector (Ic) (Max) | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power - Max | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage - Collector Emitter Breakdown (Max) |
The JANTX2N5582 is an NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for applications requiring a breakdown voltage of up to 50V and can handle a maximum collector current of 800mA. The transistor offers a DC current gain (hFE) of 100 at 150mA and 10V, with a Vce saturation of 1V at 50mA and 500mA.
With a maximum power dissipation of 500mW, the JANTX2N5582 operates across a wide temperature range from -55°C to 200°C (TJ). It is housed in a TO-46-3 metal can package and features a through-hole mounting type, making it suitable for various electronic circuits.
This transistor is specified with a collector cutoff current of 10µA (ICBO). The JANTX2N5582 is qualified under MIL-PRF-19500/423. It is noted as RoHS non-compliant and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the JANTX2N5582 is 800mA.
The collector-emitter breakdown voltage (Vce) for the JANTX2N5582 is 50V.
The JANTX2N5582 operates between -55°C and 200°C (TJ).
The JANTX2N5582 is supplied in a TO-46-3 metal can package.