Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JANTX2N5416 from Microchip Technology is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. This component features a maximum collector-emitter breakdown voltage of 300V and can handle a continuous collector current of up to 1A.
With a power dissipation rating of 750mW, the JANTX2N5416 is designed for through-hole mounting and comes in a standard TO-5 metal can package. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 2V at 5mA base current and 50mA collector current.
Operating within a temperature range of -65°C to 200°C, this transistor is a reliable choice for applications requiring moderate power handling and voltage capabilities. Its through-hole mounting makes it suitable for traditional PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTX2N5416 transistor has a maximum collector-emitter breakdown voltage of 300V.
The JANTX2N5416 can handle a continuous collector current of 1A.
The JANTX2N5416 has a power dissipation rating of 750mW.
The JANTX2N5416 operates between -65°C and 200°C.
The JANTX2N5416 is a PNP bipolar junction transistor.