JANTX2N5339 The JANTX2N5339 is an NPN Power Silicon Transistor from Microchip Technology. It offers a 100V collector-emitter voltage and a 5A collector current, housed in a TO-39 package.
Mfr Part #:

JANTX2N5339

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The JANTX2N5339 is an NPN Power Silicon Transistor from Microchip Technology. It offers a 100V collector-emitter voltage and a 5A collector current, housed in a TO-39 package.
Total Stock: 1,800 pcs
$ Price Range: $0.99

JANTX2N5339 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,800 pcs
1800 pcs On Request 1 On Request On Request On Request On Request On Request

JANTX2N5339 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Breakdown Voltage
Current
Cutoff Current (Maximum @ VCB = 100 Vdc)
Cutoff Current (Maximum @ VCE = 100 Vdc)
Cutoff Current (Maximum @ VCE = 90 Vdc, VBE = 1.5 Vdc)
Cutoff Current (Maximum @ VEB = 6.0 Vdc)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Operating Voltage (Maximum)
Package / Case
Power
Power Dissipation (Maximum @ T_A = +25 °C)
Power Dissipation (Maximum @ T_C = +25 °C)
Saturation Voltage (Maximum @ IC = 2.0 Adc, IB = 0.2 Adc)
Saturation Voltage (Maximum @ IC = 5.0 Adc, IB = 0.5 Adc)
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum @ IC = 0.5 Adc, VCE = 2.0 Vdc)
hfe (@ IC = 2.0 Adc, VCE = 2.0 Vdc)
hfe (Minimum @ IC = 5.0 Adc, VCE = 2.0 Vdc)

JANTX2N5339 Description

Short technical summary and product information.

The JANTX2N5339 is a high-reliability NPN Power Silicon Transistor manufactured by Microchip Technology. It is designed for demanding applications, featuring a maximum collector-emitter voltage of 100V and a maximum collector current of 5A.

 

This transistor operates within a wide temperature range of -65°C to +200°C, making it suitable for harsh environments. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 2A/2V and a maximum collector-emitter saturation voltage of 1.2V at 5A/0.5A.

 

The JANTX2N5339 is supplied in a TO-39 (TO-205AD) metal can package, designed for through-hole mounting. Its robust construction and specified performance make it a reliable choice for power switching and amplification circuits.

JANTX2N5339 Quick Information

Product Type: NPN Transistor
Canonical Name: JANTX2N5339 NPN Power Silicon Transistor
Subcategory: Single

JANTX2N5339 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTX2N5339 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTX2N5339 Features

  • NPN Power Silicon Transistor
  • 100V Collector-Emitter Voltage
  • 5A Collector Current
  • Wide -65°C to +200°C Operating Temperature
  • TO-39 Metal Can Package

JANTX2N5339 Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification
  • Ideal for electronic switching applications
  • Designed for through-hole mounting

JANTX2N5339 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the JANTX2N5339?

The maximum collector-emitter voltage is 100 Vdc.

What is the operating temperature range of the JANTX2N5339 transistor?

The operating and storage temperature range is -65°C to +200°C.

What package type is the JANTX2N5339 transistor supplied in?

The JANTX2N5339 is supplied in a TO-39 (TO-205AD) Metal Can package.

What is the RoHS status of the JANTX2N5339?

The RoHS status is RoHS3 Compliant.

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