| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,897 pcs
|
1897 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JANTX2N5339 from MACOM Technology Solutions is an NPN Power Silicon Transistor. It is designed for applications requiring high voltage and current handling capabilities. The transistor features a maximum collector-emitter voltage of 100 Vdc and a maximum collector current of 5 Adc.
With a power dissipation rating of 1 W at 25°C ambient temperature and 17.5 W at 25°C case temperature, this device is suitable for moderate power applications. The operating and storage temperature range is -65°C to +200°C, providing robustness in various environments.
The transistor is packaged in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 2A, 2V, and a maximum collector-emitter saturation voltage of 0.7 Vdc at 2A, 0.2A.
This component is available in various military grades, including JAN, JANTX, JANTXV, JANS, and JANSR, compliant with MIL-PRF-19500/560.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 100 Vdc.
The maximum collector current is 5 Adc.
The power dissipation is 1 W at TA = 25°C.
The operating and storage temperature range is -65°C to +200°C.
The JANTX2N5339 is available in a TO-39 (TO-205AD) package.
The JANTX2N5339 is a through-hole mounted component.
The minimum DC current gain (hFE) is 60 at 2A, 2V.