| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
78 pcs
|
78 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade |
The JANTX2N5237 is a high-performance NPN bipolar junction transistor manufactured by Microchip Technology. Designed for demanding applications, this transistor offers a robust 120V collector-emitter breakdown voltage and can handle a continuous collector current of up to 10A.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 5A and 5V, and a maximum Vce saturation of 2.5V at 1A and 10A. The device operates within a wide temperature range of -65°C to 200°C.
Packaged in a TO-205AA, TO-5-3 Metal Can configuration, the JANTX2N5237 is designed for through-hole mounting. Its military qualification (MIL-PRF-19500/394) indicates suitability for applications requiring high reliability and stringent performance standards.
This transistor is suitable for various switching and amplification applications where high voltage and current handling capabilities are essential.
The collector-emitter breakdown voltage for the JANTX2N5237 is 120V.
The JANTX2N5237 transistor has a maximum collector current of 10A.
The JANTX2N5237 operates between -65°C and 200°C.
The JANTX2N5237 is supplied in a TO-205AA, TO-5-3 Metal Can package.
The JANTX2N5237 transistor is mounted using the through-hole method.
The JANTX2N5237 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the JANTX2N5237 is 1 Unlimited.