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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Microchip Technology JANTX2N4150S is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 70V and can handle a maximum collector current of 10A.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 5A and 5V, and a Vce saturation of 2.5V at 1A and 10A. The transistor has a maximum collector cutoff current of 10μA. It is rated for a maximum power dissipation of 1W.
This component is designed for through-hole mounting and comes in a TO-205AD, TO-39-3 Metal Can package. The operating temperature range is from -65°C to 200°C (TJ). The JANTX2N4150S meets military qualification MIL-PRF-19500/394.
It is specified with RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. This transistor is ideal for applications requiring robust performance in a through-hole package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -65°C to 200°C (TJ).
The package is TO-205AD, TO-39-3 Metal Can.
The maximum collector current is 10 A.
The minimum DC current gain (hFE) is 40 at 5A, 5V.
The collector-emitter breakdown voltage is 70 V.