JANTX2N4150S The Microchip Technology JANTX2N4150S is an NPN bipolar junction transistor designed for general-purpose applications. It features a 70V collector-emitter breakdown voltage and a 10A collector current rating.
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JANTX2N4150S

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JANTX2N4150S is an NPN bipolar junction transistor designed for general-purpose applications. It features a 70V collector-emitter breakdown voltage and a 10A collector current rating.
Total Stock: 4 pcs
$ Price Range: $0.99

JANTX2N4150S Available from 1 distributor

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JANTX2N4150S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff
DC Current Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

JANTX2N4150S Description

Short technical summary and product information.

The Microchip Technology JANTX2N4150S is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 70V and can handle a maximum collector current of 10A.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 5A and 5V, and a Vce saturation of 2.5V at 1A and 10A. The transistor has a maximum collector cutoff current of 10μA. It is rated for a maximum power dissipation of 1W.

 

This component is designed for through-hole mounting and comes in a TO-205AD, TO-39-3 Metal Can package. The operating temperature range is from -65°C to 200°C (TJ). The JANTX2N4150S meets military qualification MIL-PRF-19500/394.

 

It is specified with RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. This transistor is ideal for applications requiring robust performance in a through-hole package.

JANTX2N4150S Quick Information

Product Type: NPN Transistor
Canonical Name: Microchip Technology JANTX2N4150S NPN Transistor
Subcategory: Single

JANTX2N4150S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTX2N4150S Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTX2N4150S Features

  • NPN bipolar junction transistor.
  • 70V collector-emitter breakdown voltage.
  • 10A maximum collector current.
  • 1W maximum power dissipation.
  • Through hole mounting in TO-39 package.

JANTX2N4150S Applications

  • Suitable for general purpose amplification.
  • Used in power switching circuits.
  • Ideal for high current applications.
  • Military qualified component.

JANTX2N4150S FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the JANTX2N4150S transistor?

The operating temperature range is -65°C to 200°C (TJ).

What is the package type for the JANTX2N4150S transistor?

The package is TO-205AD, TO-39-3 Metal Can.

What is the maximum collector current for the JANTX2N4150S?

The maximum collector current is 10 A.

What is the minimum DC current gain (hFE) for the JANTX2N4150S?

The minimum DC current gain (hFE) is 40 at 5A, 5V.

What is the collector-emitter breakdown voltage for the JANTX2N4150S?

The collector-emitter breakdown voltage is 70 V.

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