| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | 2000 | On Request | On Request |
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| Manufacturer Name |
This JANTX2N3763 is a PNP type Bipolar Junction Transistor (BJT) manufactured by NES MIL, adhering to the MIL-PRF-19500/396 standard. It features a maximum collector-emitter breakdown voltage of 60V and can handle a continuous collector current of up to 1.5A. The transistor has a maximum power dissipation of 1W and a high DC current gain (hFE) of 20 at 1A and 1.5V.
Designed for through-hole mounting, this component comes in a TO-39 (TO-205AD) metal can package. Its operating temperature range is from -55°C to 200°C, making it suitable for demanding environments. The saturation voltage is specified at a maximum of 900mV at 100mA collector current and 1A base current. The collector cutoff current is a low 10µA (ICBO).
This transistor is described as RoHS non-compliant and contains lead. It is supplied in bulk packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTX2N3763 has a maximum collector-emitter breakdown voltage of 60V.
The maximum continuous collector current for the JANTX2N3763 is 1.5A.
The JANTX2N3763 operates between -55°C and 200°C.
The JANTX2N3763 is supplied in a TO-39 (TO-205AD) package.
The JANTX2N3763 is described as RoHS non-compliant and contains lead.