| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Transistor Type | |
| Vce Saturation (Max) |
The JANTX2N3762 is a single bipolar junction transistor (BJT) manufactured by Raytheon. This PNP type transistor is designed for through-hole mounting in a TO-39 metal can package (TO-205AD).
Key electrical specifications include a collector-emitter breakdown voltage of 40V and a maximum collector current of 1.5A. It has a maximum power dissipation of 1W and a minimum DC current gain (hFE) of 30 at 1A and 1.5V. The saturation voltage (Vce Sat) is a maximum of 900mV at 100mA and 1A, with a collector cutoff current (ICBO) of 10µA.
This transistor operates within a wide temperature range of -55°C to 200°C. It is qualified under MIL-PRF-19500/396, indicating its suitability for military applications. The bulk packaging is suitable for various assembly processes.
Applications for the JANTX2N3762 include general-purpose amplification and switching in electronic circuits where a robust and reliable PNP transistor is required, particularly in environments demanding military-grade components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 40V.
The maximum continuous collector current is 1.5A.
The maximum power dissipation is 1W.
The operating junction temperature range is -55°C to 200°C.
It is available in a TO-205AD (TO-39-3) metal can package with through-hole mounting.
The minimum DC current gain is 30 at 1A collector current and 1.5V VCE.