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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 9641 | On Request | On Request |
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The JANTX2N3716 by NES is a high-power NPN silicon transistor qualified per MIL-PRF-19500/408. This device is suitable for demanding applications requiring robust performance.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 80 Vdc and a collector current (IC) of 10 Adc. The transistor offers a maximum power dissipation of 85.7 W at a case temperature of 100°C, and 5.0 W at an ambient temperature of 25°C. Its thermal resistance from junction to case (RθJC) is 1.17 °C/W.
The JANTX2N3716 is housed in a TO-3 (TO-204AA) package, designed for through-hole mounting. The operating and storage junction temperature range is -65°C to +200°C, ensuring reliability in harsh environments.
This transistor is part of the JAN series, indicating its qualification for military and high-reliability applications. Its specifications make it suitable for power switching and amplification circuits where high current and voltage handling are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the JANTX2N3716 is 80 Vdc.
The maximum collector current (IC) for the JANTX2N3716 is 10 Adc.
The maximum power dissipation (PT) for the JANTX2N3716 at a case temperature of 100°C is 85.7 W.
The operating and storage junction temperature range (TJ, Tstg) for the JANTX2N3716 is -65°C to +200°C.
The JANTX2N3716 is supplied in a TO-3 (TO-204AA) package.
The RoHS status of the JANTX2N3716 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the JANTX2N3716 is 1 Unlimited.