| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The JANTX2N3716 from MACOM Technology Solutions is an NPN power silicon transistor designed for demanding applications. It offers a robust 80V collector-emitter voltage rating and can handle a continuous collector current of up to 10A.
This transistor is specified with a maximum power dissipation of 5W at 25°C ambient temperature, and up to 17W at 25°C case temperature. The operating and storage junction temperature range is -65°C to +200°C.
Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 3A and 2V, and a collector-emitter saturation voltage (VCE(sat)) of up to 2.5V at 10A collector current and 2A base current. Output capacitance (Cob) is a maximum of 500pF at 1MHz.
The JANTX2N3716 is housed in a TO-204AA (TO-3) package and is designed for through-hole mounting. It is available in JAN, JANTX, and JANTXV specifications per MIL-PRF-19500/408.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the JANTX2N3716 is 80Vdc.
The continuous collector current (IC) rating is 10Adc.
The power dissipation (PT) is 5W at TA = 25°C and 17W at TC = 25°C.
The operating and storage junction temperature range is -65°C to +200°C.
The transistor is supplied in a TO-204AA (TO-3) package.
The minimum DC current gain (hFE) at IC = 3A and VCE = 2V is 30.
The maximum collector-emitter saturation voltage (VCE(sat)) at IC = 10A and IB = 2A is 2.5Vdc.