| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Tape & Reel | |
| Transistor Type |
The JANTX2N3715 from Microchip Technology is a single NPN bipolar junction transistor (BJT) housed in a TO-3 package. This component is designed for through-hole mounting and offers a collector-emitter breakdown voltage of 60V.
Key electrical characteristics include a maximum collector current of 1mA and a maximum power dissipation of 5W. The DC current gain (hFE) is a minimum of 50 at 1A and 2V. The saturation voltage (Vce Sat) is specified at 2.5V maximum under specific base and collector current conditions (2A, 10A).
This transistor is part of the Military, MIL-PRF-19500/408 series, indicating its suitability for demanding applications. Its TO-3 packaging and through-hole mounting make it suitable for power applications where robust thermal management is required.
Environmental compliance data indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are noted with low confidence due to lack of verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTX2N3715 has a collector-emitter breakdown voltage of 60V.
The maximum collector current (Ic) for the JANTX2N3715 is 1 mA.
The JANTX2N3715 has a maximum power dissipation of 5W.
The JANTX2N3715 is available in a TO-3 package.
The JANTX2N3715 is designed for through-hole mounting.
The minimum DC current gain (hFE) for the JANTX2N3715 is 50 at 1A and 2V.