JANTX2N3637L The Microchip Technology JANTX2N3637L is a PNP bipolar transistor designed for through-hole mounting. It features a 175V collector-emitter breakdown voltage and a 1A maximum collector current.
Mfr Part #:

JANTX2N3637L

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The Microchip Technology JANTX2N3637L is a PNP bipolar transistor designed for through-hole mounting. It features a 175V collector-emitter breakdown voltage and a 1A maximum collector current.
Total Stock: 112 pcs
$ Price Range: $0.99

JANTX2N3637L Available from 1 distributor

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112 pcs
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JANTX2N3637L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

JANTX2N3637L Description

Short technical summary and product information.

The Microchip Technology JANTX2N3637L is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for through-hole mounting and comes in a TO-205AA, TO-5-3 Metal Can package.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 175V and a maximum continuous collector current of 1A. The transistor offers a minimum DC current gain (hFE) of 100 at 50mA and 10V, with a maximum Vce saturation of 600mV at 5mA/50mA. The maximum power dissipation is rated at 1W, and it operates within a temperature range of -65°C to 200°C (TJ).

 

This component is specified for military grade applications with a qualification of MIL-PRF-19500/357. Its robust design and specifications make it suitable for demanding environments.

JANTX2N3637L Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: Microchip Technology JANTX2N3637L PNP Bipolar Transistor
Subcategory: Single

JANTX2N3637L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

JANTX2N3637L Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTX2N3637L Features

  • PNP bipolar transistor type.
  • 175V collector-emitter breakdown voltage.
  • 1A maximum collector current.
  • 1W maximum power dissipation.
  • Through-hole mounting package.

JANTX2N3637L Applications

  • Used in high-voltage switching circuits
  • Suitable for amplification applications
  • Ideal for industrial temperature environments
  • Designed for through-hole mounting

JANTX2N3637L FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the JANTX2N3637L transistor?

The operating temperature range is -65°C to 200°C (TJ).

What is the maximum collector current for the JANTX2N3637L?

The maximum collector current is 1A.

What is the collector-emitter breakdown voltage of the JANTX2N3637L?

The collector-emitter breakdown voltage is 175V.

What is the package type for the JANTX2N3637L transistor?

The package is TO-205AA, TO-5-3 Metal Can.

How is the JANTX2N3637L transistor mounted?

It is mounted using the through-hole method.

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