| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature |
The JANTX2N3637 is a PNP Silicon Amplifier Transistor manufactured by Motorola Semiconductor. This component is designed for amplifier applications and is qualified per MIL-PRF-19500.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 175V and a maximum collector current (IC) of 1A. The transistor is housed in a TO-39 metal package, suitable for through-hole mounting.
This device is part of a series of qualified transistors including 2N3634, 2N3635, 2N3636, and their 'L' variants, indicating a range of performance options within the same qualification standard.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the JANTX2N3637 is 175V.
The maximum collector current (IC) for the JANTX2N3637 is 1A.
The JANTX2N3637 is available in a TO-39 metal package.
The JANTX2N3637 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the JANTX2N3637 is 1 Unlimited.