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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,524 pcs
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2524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
181 pcs
|
181 pcs | On Request | 1 | On Request | On Request | 1311 | On Request | On Request |
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The JANTX2N3637 is a PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. This component is designed for general-purpose applications requiring a voltage rating of 175V and a continuous current of 1A. It has a power dissipation of 1W and operates within a temperature range of -65°C to 200°C.
The transistor features a TO-5 metal can package and is designed for through-hole mounting, making it suitable for various circuit board assemblies. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 50mA and 10V, and a Vce saturation of 600mV at 5mA and 50mA.
This device is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1. Its REACH status is unaffected. The JANTX2N3637 is a reliable choice for applications needing a robust PNP transistor with specified performance parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the JANTX2N3637 is 175V.
The JANTX2N3637 can handle a continuous current of 1A.
The JANTX2N3637 has a power dissipation of 1W.
The JANTX2N3637 operates between -65°C and 200°C.
The minimum DC current gain (hFE) for the JANTX2N3637 is 100 at 50mA and 10V.
The Vce saturation voltage for the JANTX2N3637 is 600mV maximum at 5mA and 50mA.
The JANTX2N3637 is a PNP bipolar transistor.