| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
38 pcs
|
38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N3501 from Microchip Technology is a single NPN bipolar junction transistor (BJT) suitable for discrete component applications. It features a maximum collector-emitter breakdown voltage of 150V and can handle a continuous collector current of up to 300mA, with a maximum power dissipation of 1W.
This transistor is housed in a TO-39 metal can package and is designed for through-hole mounting. It operates within a wide temperature range of -65°C to 200°C (TJ). The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation of 400mV at 15mA collector current and 150mA base current.
Key electrical characteristics include a collector cutoff current of 10µA (ICBO). The JANTX2N3501 is part of the Military, MIL-PRF-19500/366 series, indicating its suitability for demanding applications. Its robust specifications make it a reliable choice for power management and communication circuits requiring discrete transistor components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -65°C to 200°C (TJ).
The JANTX2N3501 is an NPN bipolar transistor.
The maximum collector current is 300 mA.
The package type is TO-205AD, TO-39-3 Metal Can, with a supplier device package of TO-39.
The RoHS status is RoHS non-compliant.