| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | 417 | On Request | On Request |
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The JANTX2N3467 is a PNP bipolar junction transistor (BJT) manufactured by Microsemi Corporation. This component is designed for applications requiring a robust transistor with specific electrical characteristics. It offers a collector-emitter breakdown voltage of 40V and can handle a maximum collector current of 1A. The transistor exhibits a minimum DC current gain (hFE) of 40 at 500mA and 1V, with a Vce saturation of 1.2V at 100mA and 1A.
Operating within a wide temperature range of -55°C to 175°C, the JANTX2N3467 is suitable for demanding environments. It is qualified under MIL-PRF-19500/348, indicating its suitability for military and high-reliability applications. The transistor is housed in a TO-205AD, TO-39-3 Metal Can package, designed for through-hole mounting.
Key electrical parameters include a maximum collector cutoff current (ICBO) of 100nA and a maximum power dissipation of 1W. The JANTX2N3467 is a reliable choice for various electronic circuits where PNP transistor characteristics are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $342.32 | $342.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 40V.
The maximum continuous collector current is 1A.
The maximum power dissipation is 1W.
The minimum hFE is 40 at 500mA collector current and 1V Vce.
The maximum Vce(sat) is 1.2V at 100mA base current and 1A collector current.
The operating junction temperature range is -55°C to 175°C.
It is qualified to MIL-PRF-19500/348.