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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,898 pcs
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6898 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-06-29 21:33:16 |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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This NPN bipolar junction transistor (BJT) from Microchip Technology, part number JANTX2N3439, is designed for general-purpose applications requiring high voltage and current handling. It offers a maximum continuous collector current of 1A and a collector-emitter voltage of 350V.
The transistor features a DC current gain (hFE) of 40 minimum at 20mA collector current and 10V collector-emitter voltage. Its saturation voltage (Vce(sat)) is a maximum of 500mV at 4mA base current and 50mA collector current.
Packaged in a TO-39 metal can, the JANTX2N3439 is designed for through-hole mounting. It operates across a wide temperature range from -65°C to 200°C (TJ), making it suitable for demanding environments. The RoHS status is compliant, and it has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The JANTX2N3439 has a maximum collector-emitter voltage of 350V.
The continuous collector current rating is 1A.
The minimum DC current gain (hFE) is 40 at 20mA collector current and 10V collector-emitter voltage.
The operating temperature range is -65°C to 200°C (TJ).
The JANTX2N3439 is supplied in a TO-39 package.
The JANTX2N3439 is mounted using through-hole technology.